unisonic technologies co., ltd mmdt2222a preliminary dual transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r218-016.a dual npn small signal surface mount transistor ? description the utc mmdt2222a is a dual npn small signal surface mount transistor. it?s suitable for low power amplification and switch. ? features * suitable for low power amplification and switching * epitaxial planar die construction * extremely-small surface mount package ? equivalent circuit tr1 654 tr2 12 3 ? ordering information ordering number lead free halogen free package packing MMDT2222AL-AL6-R mmdt2222ag-al6-r sot-363 tape reel ? marking information
mmdt2222a preliminary dual transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r218-016.a ? absolute maximum ratings (t a =25 c, unless otherwise specified.) parameter symbol ratings unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current-continuous i c 600 ma power dissipation (note 2) p d 200 mw junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. maximum combined dissipation. ? thermal data (t a =25 c, unless otherwise specified.) parameter symbol ratings unit junction to ambient ja 625 c/w ? electrical characteristics (t a =25 c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics (note) collector-base breakdown voltage v (br)cbo i c =10 a, i e =0 75 v collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 6.0 v v cb =60v, i e =0 10 na collector-current i cbo v cb =60v, i e =0, t a =150c 10 a collector- current i cex v ce =60v, v eb(off) =3.0v 10 na emitter- current i ebo v eb =3.0v, i c =0 10 na base- current i bl v ce =60v, v eb(off) =3.0v 20 na on characteristics (note) i c =100a, v ce =10v 35 i c =1.0ma, v ce =10v 50 i c =10ma, v ce =10v 75 i c =150ma, v ce =10v 100 300 i c =500ma, v ce =10v 40 i c =10ma, v ce =10v, t a =-55 c 50 dc current gain h fe i c =150ma, v ce =1.0v 35 i c =150ma, i b =15ma 0.3 v collector-emitter satu ration voltage v ce(sat) i c =500ma, i b =50ma 1.0 v i c =150ma, i b =15ma 0.6 1.2 v base-emitter satura tion voltage v be(sat) i c =500ma, i b =50ma 2.0 v small signal characteristics output capacitance c obo v cb =10v, f=1.0mhz, i e =0 8 pf input capacitance c ibo v eb =0.5v, f=1.0mhz, i c =0 25 pf current gain-bandwidth product f t v ce =20v, i c =20ma, f=100mhz 300 mhz noise figure nf v ce =10v, i c =100 a, r s =1.0k ? , f=1.0khz 4.0 db switching characteristics delay time t d 10 ns rise time t r v cc =30v,i c =150ma,v be(off) =-0.5v, i b1 =15ma 25 ns storage time t s 225 ns fall time t f v cc =30v, i c =150ma, i b1 =i b2 =15ma 60 ns note: short duration pulse test used to minimize self-heating effect.
mmdt2222a preliminary dual transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r218-016.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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